Large electric-field-induced strain in ferroelectric crystals by point-defect-mediated reversible domain switching (2024)

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Abstract Access options Additional access options: Similar content being viewed by others Anisotropic epitaxial stabilization of a low-symmetry ferroelectric with enhanced electromechanical response Simultaneously achieving giant piezoelectricity and record coercive field enhancement in relaxor-based ferroelectric crystals Role of ferroelectric polarization during growth of highly strained ferroelectric materials References Acknowledgements Author information Authors and Affiliations Ethics declarations Competing interests Supplementary information Supplementary Information, Fig. S1 Rights and permissions About this article Cite this article This article is cited by Contribution of irreversible non-180° domain to performance for multiphase coexisted potassium sodium niobate ceramics Double hysteresis (P-E) loops in the transparent composite containing BaTiO3 at room temperature A review on piezoelectric ceramics and nanostructures: fundamentals and fabrications Effect of sintering condition and Ca2+-substitution on structural and electrical properties of lead-free Ba0.46Sr0.54TiO3 piezoceramics for uncooled IR detectors application Extended planar defects of oxygen vacancies in ferroelectric \(\hbox {BaTiO}_3\) and impact on ferroelectricity References
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  • Xiaobing Ren1,2,3

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Abstract

Ferroelectric crystals are characterized by their asymmetric or polar structures. In an electric field, ions undergo asymmetric displacement and result in a small change in crystal dimension, which is proportional to the applied field1,2. Such electric-field-induced strain (or piezoelectricity) has found extensive applications in actuators and sensors2. However, the effect is generally very small and thus limits its usefulness. Here I show that with a different mechanism, an aged BaTiO3 single crystal can generate a large recoverable nonlinear strain of 0.75% at a low field of 200 V mm−1. At the same field this value is about 40 times higher than piezoelectric Pb(Zr, Ti)O3 (PZT) ceramics and more than 10 times higher than the high-strain Pb(Zn1/3Nb2/3)O3–PbTiO3 (PZN-PT) single crystals3,4,5. This large electro-strain stems from an unusual reversible domain switching (most importantly the switching of non-180° domains) in which the restoring force is provided by a general symmetry-conforming property of point defects. This mechanism provides a general method to achieve large electro-strain effect in a wide range of ferroelectric systems and the effect may lead to novel applications in ultra-large stroke and nonlinear actuators.

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References

  1. Lines, M.E. & Glass, A.M. Principles and Applications of Ferroelectrics and Related Materials (Oxford Univ. Press, Oxford, 1979).

    Google Scholar

  2. Uchino, K. Piezoelectric Actuators and Ultrasonic Motors (Kluwer Academic, Boston, 1996).

    Book Google Scholar

  3. Park, S.E. & Shrout, T.R. Ultrahigh strain and piezoelectric behaviour in relaxor based ferroelectric single crystal. J. Appl. Phys. 82, 1804–1811 (1997).

    Article CAS Google Scholar

  4. Service, R.F. Shape-changing crystals get shifter. Science 275, 1878 (1997).

    Article CAS Google Scholar

  5. Fu, H. & Cohen, R.E. Polarization rotation mechanism for ultrahigh electromechanical response in single-crystal piezoelectrics. Nature 403, 281–283 (2003).

    Article Google Scholar

  6. Cohen, R.E. Origin of ferroelectricity in oxide ferroelectrics and the difference in ferroelectric behavior of BaTiO3 and PbTiO3 . Nature 358, 136–138 (1992).

    Article CAS Google Scholar

  7. Park, S.E., Wada, S., Cross, L.E. & Shrout, T.R. Crystallographically engineered BaTiO3 single crystals for high-performance piezoelectrics. J. Appl. Phys. 86, 2746–2750 (1999).

    See Also
    What China, Germany, and Texas Tell Us about Capacity Adequacy

    Article CAS Google Scholar

  8. Burcsu, E., Ravichandran, G. & Bhattacharya, K. Large strain electrostrictive actuation in barium titanate. Appl. Phys. Lett. 77, 1698–1700 (2000).

    Article CAS Google Scholar

  9. Ren, X. & Otsuka, K. Origin of rubber-like behaviour in metal alloys. Nature, 389, 579–582 (1997).

    Article CAS Google Scholar

  10. Ren, X. & Otsuka, K. Universal symmetry property of point defects in crystals. Phys. Rev. Lett. 85, 1016–1019 (2000).

    Article CAS Google Scholar

  11. Wayman, C.M. Shape memory and related phenomena. Prog. Mater. Sci. 36, 203–224 (1992).

    Article CAS Google Scholar

  12. Christian, J.W. Deformation by moving interface. Metall. Trans. A 13, 509–538 (1982).

    Article CAS Google Scholar

  13. Tsunekawa, S., Suezawa, M. & Takei, H. New type ferroelastic behaviour of NdNbO4 crystals. Phys. Stat. Sol. A 40, 437–446 (1977).

    Article CAS Google Scholar

  14. Ren, X. & Otsuka, K. The interaction of point defects with the martensitic transformation: A prototype of exotic multiscale phenomena. Mater. Res. Soc. Bull. 27, 115–120 (2002).

    Article CAS Google Scholar

  15. Warren, W.L. et al. Defect-dipole alignment and tetragonal strain in ferroelectrics, J. Appl. Phys. 79, 9250–9257 (1996).

    Article CAS Google Scholar

  16. Warren, W.L., Dimos, D., Pike, G.E., Vanheusden, K. & Ramesh, R. Alignment of defect dipoles in polycrystalline ferroelectrics. Appl. Phys. Lett. 67, 1689–1691 (1995).

    Article CAS Google Scholar

  17. Lohkamper, R., Neumann, H. & Arlt, G. Internal bias in acceptor-doped BaTiO3 ceramics: Numerical evaluation of increase and decrease. J. Appl. Phys. 68, 4220–4225 (1990).

    Article Google Scholar

  18. Robels, U. & Arlt, G. Domain wall clamping in ferroelectrics by orientation of defects, J. Appl. Phys. 73, 3454–3460 (1993).

    Article CAS Google Scholar

  19. Chynoweth, A.G. Radiation damage effects in ferroelectric Triglycine sulfate. Phys. Rev. 113, 159 (1959).

    Article CAS Google Scholar

  20. Keve, E.T., Bye, K.L., Whipps, P.W. & Annis, A.D. Structural inhibition of ferroelectric switiching in triglycine sulfate. Ferroelectrics 3, 39–48 (1971).

    Article CAS Google Scholar

  21. Lambeck, P.V. & Jonker, G.H. The nature of domain stabilization in ferroelectric pervoskites. J. Phys. Chem. Solids 47, 453–461 (1986).

    Article CAS Google Scholar

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Acknowledgements

The author thanks H.S. Luo for providing single crystal samples, D.Z. Sun, K. Otsuka, T. Suzuki, K. Nakamura, L.X. Zhang, W. Chen for helpful discussions, and K. Nishida for EPMA chemical analysis of the samples. This work was supported by Sakigake-21 of JST and a special fund for Cheungkong Professorship and National Natural Science Foundation of China.

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Authors and Affiliations

  1. Materials Physics Group, National Institute for Materials Science, Tsukuba, 305-0047, Ibaraki, Japan

    Xiaobing Ren

  2. PRESTO, Japan Science and Technology Agency, Kawaguchi, 332-0012, Japan

    Xiaobing Ren

  3. Multi-disciplinary Materials Research Centre and State Key Laboratory for Mechanical Behaviour of Materials, Xi'an Jiaotong University, Xi'an, 710049, China

    Xiaobing Ren

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  1. Xiaobing Ren

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Ren, X. Large electric-field-induced strain in ferroelectric crystals by point-defect-mediated reversible domain switching. Nature Mater 3, 91–94 (2004). https://doi.org/10.1038/nmat1051

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Large electric-field-induced strain in ferroelectric crystals by point-defect-mediated reversible domain switching (2024)

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